ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,202, issued on July 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method of forming capacitor" was invented by Kai... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,203, issued on July 21, was assigned to Nexperia B.V. (Nijmegen, Netherlands). "Merged-PiN schottky (MPS) diode having a doped region surro... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,204, issued on July 21, was assigned to SUN YAT-SEN UNIVERSITY (Guangdong, China). "GaN-based trench metal oxide Schottky barrier diode and... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,205, issued on July 21, was assigned to Canon K.K. (Tokyo). "Resonant tunneling diode, oscillator and detection system" was invented by Tat... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,206, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Heterojunction bipolar transistors including an intrinsic... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,207, issued on July 21, was assigned to NXP B.V. (Eindhoven, Netherlands). "Semiconductor device with a monocrystalline extrinsic base and ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,208, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device" was invented by Tomohito Kudo (Tokyo). A... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,209, issued on July 21, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device for improving on voltage and satura... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,210, issued on July 21, was assigned to Mitsubishi Electric Corp. (Tokyo). "Manufacturing method for semiconductor device" was invented by ... Read More
ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,212, issued on July 21. "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxia... Read More